NCE4435

NCEP-ChannelEnhancementModePowerMOSFET

NCE4435

P-Channel30-V(D-S)MOSFET

NCE4435B

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE4435Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-12A RDS(ON)

NCE4435X

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE4435Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-10A RDS(ON)

PD4435

4-Character5x7DotMatrixAlphanumericProgrammableDisplay??withBuilt-inCMOSControlFunctions

DESCRIPTION TheseProgrammableDisplaysarefourdigitdisplaysystemmodules.Thecharactersare0.20by0.14(PD243X),0.27by0.20(PD353X),and0.45by0.27(PD443X)5x7dotmatrixarraysconstructedwiththelatestsolidstatetechnologyinlightemittingdiodes. FEATURES •FourDotMa

PD4435

Lead(Pb)FreeProduct-RoHSCompliant

PE4435

NFEMALECLAMPATTACHMENT

PJQ4435EP

30VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-10A

PJQ4435EP-AU

30VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-10A

PT4435

30VP-ChannelEnhancementModeMOSFET