MIP301

SiliconMOSIC

■Features ●100VhighbreakdownvoltageMOSFETandCMOScontrolcircuitsareintegratedintoonechip ●5Vand3-5Woutputwith24VDCinput(Flybackmethod) ■Applications ●IPDforDC/DCconverter

MKT-U301A

PINGRIDARRAYCERAMIC301PINCAVITYDOWN

MMBD301

SchottkyBarrierDiode

SchottkyBarrierDiode SourcedfromProcessGD

MMBD301

SURFACEMOUNTSCHOTTKYDIODE

VOLTAGE30VoltsPOWER200mWatts FEATURES •LowCapacitance:1.5pF(Max)atVR=15V •VeryLowVF:0.36V(Typ)atIF=1mA •ExtremelyFastSwitchingSpeed •LeadfreeincomplywithEURoHS2011/65/EUdirectives. •GreenmoldingcompoundasperIEC61249Std..(HalogenFree) MECHANICALDATA

MMBD301

SurfaceMountSchottkyBarrierDiode

Features *LowTurn-onVoltage *ForUHFandVHFdetectorapplication *AlsosuitableforsomeothersFastSwitching RFanddigitalapplication *ExtremelyLowMinorityCarrierLifetime-15ps(Typ) *LowReverseLeakage-IR=13nAdc(Typ) *VeryLowCapacitance-1.5pF(Max)@V=15VR

MMBD301

SchottkyBarrierDiode

SchottkyBarrierDiode

MMBD301

30VoltsSchottkyBarrierDiodes

Features •HighEfficiencyUHFandVHFDetectorApplications. •LowCapacitanceandLowReverseLeakage •ExtremelyLowMinorityCarrierLifetime–15ps(Typ) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabili

MMBD301

SchottkyBarrierDiodes

MMBD301

SOT-23Plastic-EncapsulateDiodes

SOT-23Plastic-EncapsulateDiodes Features ●SmallSurfaceMountingType ●HighReliability

MMBD301

SchottkyBarrierDiode

Features ◇Surfacemountpackageideallysuited forautomaticinsertion. Applications ◇SourcedfromprocessGD.