TGA2720-SM

2.5GHz802.16eWiMaxAmplifier

UPA2720AGR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2720AGRisN-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofanotebook computerandLithium-Ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=6.6mΩMAX.(VGS=10V,ID=7A) RDS(on)2=14mΩMAX.(VGS=5.

UPA2720GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2720GRisN-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=6.6mΩMAX.(VGS=10V,ID=7A) RDS(on)2=10mΩMAX.(VGS=4.5V,ID

VDA2720CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

VDA2720NTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

VSMG2720

HighSpeedInfraredEmittingDiode,830nm,GaAlAsDoubleHetero

DESCRIPTION VSMG2720isaninfrared,830nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaPLCC-2packageforsurfacemounting(SMD).A19chipprovidesoutstandinglowforwardvoltageandradiantintensityevenat1Apulsecurrent. FE

VSMG2720

HighSpeedInfraredEmittingDiode,830nm,GaAlAsDoubleHetero

VSMG2720

HighSpeedInfraredEmittingDiode

WCM2720

AC/DCSensingCurrentModulewithDigitalDataoutput

Feature OperatingvoltageDC5.0V 0.4mΩinternalconductorresistance Sensingcurrentrange: AC: 0~20A50Hz,60Hz) DC: 0~25A Highaccuracy: AC: (0~6A)60mA (6~20 A)1 DC: ±±(0~6A)60mA ± ±(6~25A)1 Highresolution: AC/DC: 18mA UARTdigitaldat

WCS2720

HallEffectBaseLinearCurrentSensor