MI-QC243-MYY

MilitaryDC-DCPowerSupplies

MJD243

NPNSILICONPOWERTRANSISTOR4AMPERES100VOLTS12.5WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

MJD243

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD243

ComplementarySiliconPlasticPowerTransistor

MJD243

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications

MJD243

ComplementarySiliconPlasticPowerTransistors

MJD243

ComplementarySiliconPlasticPowerTransistors

MJD243

SiliconNPNtransistorinaTO-252PlasticPackage

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowCollector−EmitterSaturationVoltage,HighCurrent−Gain. Applications Lowpoweraudioamplifier,Lowcurrent,highspeedswitchingapplications.

MJD243

iscSiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min)@IC=0.2A •LowCollectorSaturationVoltage- :VCE(sat)=0.3V(Max.)@IC=0.5A •ComplementtothePNPMJD253 •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS •Designedforlowpo