MJD243

NPNSILICONPOWERTRANSISTOR4AMPERES100VOLTS12.5WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

MJD243

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD243

ComplementarySiliconPlasticPowerTransistor

MJD243

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications