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NJM2162V

J-FETINPUTOPERATIONALAMPLIFIER??????

■GENERALDESCRIPTION TheNJM2162/64combinesfeatureoftheNJM062/064aswellasandprovidingthecapabilityofwiderbandwidthandhigherslewrate.Itissuitablefortelecomapplication(activefiltersetc.). ■FEATURES ●OperatingVoltage(±2V~±18V) ●HighInputResistance

NJRCNew Japan Radio

新日本无线株式会社

NYS2162

TINYxlrCableConnectors

3,4and5poleversionsavailable Easytoassemble Robustmetalhousingwithbestflexrelief Shieldedsystem–highnoiseimmunity andEMIprotection Intuitiveandruggedlockingmechanism providessecurelockingsystem Millionfoldprovenchucktypestrainrelief Keyedinsertandstrain

REAN

rean

PB2162

HighFrequencyWireWoundTransformers

pulse

Pulse A Technitrol Company

PB2162NL

HighFrequencyWireWoundTransformers

pulse

Pulse A Technitrol Company

PIMXRT2162AVMAA

i.MXRT1170CrossoverProcessorsDataSheetforAutomotiveProducts

Features Thei.MXRT1170processorsarebasedonArmCortex®-M7Core™Platform,whichhasthefollowing features: •TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7-M

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PIMXRT2162AVPAA

i.MXRT1170CrossoverProcessorsDataSheetforAutomotiveProducts

Features Thei.MXRT1170processorsarebasedonArmCortex®-M7Core™Platform,whichhasthefollowing features: •TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7-M

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

RCJ-2162

RCAJACK

CUI

CUI Inc.

RF2162

3V900MHzLINEARAMPLIFIER

RFMD

RF Micro Devices

RF2162

3V900MHZLINEARAMPLIFIER

ProductDescription TheRF2162isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindual-mode3VC

RFMD

RF Micro Devices

RF2162PCBA

3V900MHZLINEARAMPLIFIER

ProductDescription TheRF2162isahigh-power,high-efficiencylinearamplifierICtargeting3Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindual-mode3VC

RFMD

RF Micro Devices

详细参数

  • 型号:

    MAX2162ETL

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Maxim Integrated Products

供应商型号品牌批号封装库存备注价格
MAXIM
24+
QFN40
5000
全现原装公司现货
询价
MAXIM
19+
QFN40
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MAXIM
22+
QFN40
8200
原装现货库存.价格优势!!
询价
MAXIM/美信
23+
QFN40
50000
全新原装正品现货,支持订货
询价
MAXIM
23+
QFN40
3200
全新原装、诚信经营、公司现货销售!
询价
MAXIM/美信
23+
QFN40
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
MAXIM/美信
23+
QFN-40
89630
当天发货全新原装现货
询价
MAX
2405+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
MAXIM
2016+
DIP
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
maxim
20+
50000
全新现货热卖中欢迎查询
询价
更多MAX2162ETL供应商 更新时间2025-5-17 10:20:00