首页 >MAX170DCWET>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TO-126Plastic-EncapsulateTransistors FEATURES LowPowerAudioAmplifier LowCurrent,HighSpeedSwitchingApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SiliconPNPPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
PNPGeneralPurposeTransistor FEATURES ●Lowfrequencyamplifier ●Lowcurrent ●Highspeedswitchingapplications | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SILICONCOMPLEMENTRYPOWERTRANSISTOR
| CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPlasticSiliconPowerTransistors ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171, | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TO-126Plastic-EncapsulateTransistors FEATURES LowPowerAudioAmplifier LowCurrent,HighSpeedSwitchingApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
VisibleLEDConventionalBrightness-GaP,GaAsPandAlGaAs | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
VisibleLEDConventionalBrightness-GaP,GaAsPandAlGaAs | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS |
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