Package：20-WQFN 裸露焊盘；包装：管件 类别：集成电路（IC） LED 驱动器 描述：IC LED DRVR LIN PWM 350MA 20TQFN

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亚德诺

MOS INTEGRATED CIRCUIT

FEATURES • High drive current IDR = 3 A MAX. at PW £ 200 ms (single pulse) IDR = 0.5 A (DC) • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.6 W TYP. at IDR = 0.5 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin pl

文件：233.6 Kbytes 页数：14 Pages

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MONOLITHIC H BRIDGE DRIVER CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：87.83 Kbytes 页数：12 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High drive current IDR = 3 A MAX. at PW £ 200 ms (single pulse) IDR = 0.5 A (DC) • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.6 W TYP. at IDR = 0.5 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin pl

文件：233.6 Kbytes 页数：14 Pages

RENESAS

瑞萨