MONOLITHIC H BRIDGE DRIVER CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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MOS INTEGRATED CIRCUIT

FEATURES • High drive current IDR = 3 A MAX. at PW £ 200 ms (single pulse) IDR = 0.5 A (DC) • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.6 W TYP. at IDR = 0.5 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin pl

文件：233.6 Kbytes 页数：14 Pages

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MONOLITHIC H BRIDGE DRIVER CIRCUIT

DESCRIPTION\nThe µPD16804 is a monolithic H bridge driver IC which uses low-ON resistance power MOS FETs in its driver stage. This driver has a forward, reverse, and brake functions and is ideal for the driver circuit of motors for camera that advance or rewind the film, and auto focusing or zooming • High drive current\n  IDR= 3 A MAX. at PW ≤200 ms (single pulse)\n  IDR= 0.5 A (DC)\n• Low-ON resistance (sum of ON resistances of top and bottom MOS FET)\n   RON= 0.6 ΩTYP. at IDR= 0.5 A\n• Standby function that turns OFF charge pump circuit\n• Compact surface mount package\n   16-pin plastic SOP;

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瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High drive current IDR = 3 A MAX. at PW £ 200 ms (single pulse) IDR = 0.5 A (DC) • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.6 W TYP. at IDR = 0.5 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin pl

文件：233.6 Kbytes 页数：14 Pages

RENESAS

瑞萨

MONOLITHIC H BRIDGE DRIVER CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：87.83 Kbytes 页数：12 Pages

NEC

瑞萨