MAX11014BGTMRF/IF射频/中频RFID的RFIC模块规格书PDF中文资料

General Description

The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation, while the MAX11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data.

Features

♦ Dual Drain-Current-Sense Gain Amplifier

    Preset Gain of 4

    ±0.5 Accuracy for Sense Voltages Between

    75mV and 625mV (MAX11014)

♦ Common-Mode Sense-Resistor Voltage Range

    0.5V to 11V (MAX11014)

    5V to 32V (MAX11015)

♦ Low-Noise Output GATE Bias with ±10mA GATE Drive

♦ Fast Clamp and Power-On Reset

♦ 12-Bit DAC Controls MESFET GATE Voltage

♦ Internal Temperature Sensor/Dual Remote Diode Temperature Sensors

♦ Internal 12-Bit ADC Measures Temperature and Voltage

♦ Pin-Selectable Serial Interface

    3.4MHz I2C-Compatible Interface

    20MHz SPI-/MICROWIRE-Compatible Interface

Applications

    Cellular Base-Station RF MESFET Bias Controllers

    Point-to-Point or Point-to-Multipoint Links

    Industrial Process Control