MAX11014BGTM

Automatic RF MESFET Amplifier Drain-Current Controllers

GeneralDescription TheMAX11014/MAX11015setandcontrolbiasconditionsfordualMESFETpowerdevicesfoundinpoint-topointcommunicationandothermicrowavebasestations.TheMAX11014integratescompletedualanalogclosed-loopdrain-currentcontrollersforClassAMESFETamplifieroperation

MAX11014BGTM+

Automatic RF MESFET Amplifier Drain-Current Controllers

MAX11014BGTM+

Package：48-WFQFN 裸露焊盘；包装：卷带（TR） 功能：RF MESFET 放大器漏极电流控制器 类别：RF/IF，射频/中频和 RFID RF 其它 IC 和模块 描述：IC RF MESFET AMP 48TQFN

MAX11014BGTM+T

包装：盒 类别：RF/IF，射频/中频和 RFID RF 其它 IC 和模块 描述：IC RF MESFET AMP 48TQFN

MJ11014

PowerTransistors

PowerTransistors TO-3Case(Continued)

MJ11014

BipolarNPNDeviceinaHermeticallysealedTO3

MJ11014

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=90V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=20A •LowCollectorSaturationVoltage- :VCE(sat)=3.0V(Max.)@IC=20A •ComplementtoTypeMJ11013 APPLICATIONS •Designedforuseasoutputdevicesi

MJ11014

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C

MJ11014

POWERTRANSISTORS(30A,60-120V,200W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun

MJ11014

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS