Description

M/A-COM Technology Solutions’ MAVR- 000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. This diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

Features

• Usable Past 70GHz

• Constant Gamma for Linear Tuning

• Low Parasitic Capacitance

• High Q

• Silicon Nitride Passivation

• Polyimide Scratch Protection

• Surface Mount Configuration

• Lead Free (RoHs Compliant)

• Available in Pocket Tape and Reel.

• Can withstand 500 Temperature

Cycles (-65 Deg.C. to +150 Deg.C),

mounted with 96.5Sn/3.5Ag solder

without Mechanical Degradation.

• Can be Mounted with Solder or

Conductive Epoxy.

MAVR-000120-14110G属于分立半导体产品 > 二极管 - 可变电容（变容器，可变电抗器）。Tyco Electronics制造生产的MAVR-000120-14110G二极管 - 可变电容（变容器，可变电抗器）可变电容二极管可按照电子可变电容器用途进行生产和分类，并且广泛用于调谐和频率合成应用。虽然大多数二极管的结电容都随着所施加的反向偏压增加而减小，并且能够用作可变电容二极管，但专门作为此类器件销售的产品在生产和分类时特别考虑了这种用途。