MAVR-000120-1411分立半导体产品的二极管-可变电容（变容器可变电抗器）规格书PDF中文资料

描述 Description

The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. This diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

特性 Features

• Usable Past 70 GHz

• Constant Gamma for Linear Tuning

• Low Parasitic Capacitance

• High Q

• Silicon Nitride Passivation

• Polyimide Scratch Protection

• Surface Mount Configuration

• Lead Free (RoHs Compliant)

• Available in Pocket Tape and Reel

• Can withstand 500 Temperature Cycles (-65°C to

+150°C), mounted with 96.5 Sn/3.5 Ag solder

without Mechanical Degradation.

• Can be Mounted with Solder or Conductive

Epoxy