Low Noise, Matched Dual Monolithic Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

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Audio, Dual-Matched NPN Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

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Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

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Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

文件：266.63 Kbytes 页数：12 Pages

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Audio, Dual-Matched NPN Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

文件：271.97 Kbytes 页数：12 Pages

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Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

文件：266.63 Kbytes 页数：12 Pages

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音频双通道匹配NPN晶体管

MAT12是一款双通道NPN匹配晶体管对，专门针对超低噪声音频系统而设计。\n\n 该器件具有极低的输入基极分布电阻（rbb典型值为28 Ω）和高电流增益（IC = 1 mA时，hFE典型值超过600），可以实现卓越的信噪比。与采用市面有售的单芯片放大器的系统相对，高电流增益可以带来出色的性能。\n\n MAT12具有出色的电流增益匹配（ΔhFE约为0.5%）和较低的VOS（典型值为10 µV），是有利于减少高阶放大器谐波失真的对称平衡设计的理想选择。\n\n 基极发射极结点处的保护二极管可以保证匹配参数的稳定性。这些二极管能够防止基极-发射极结点反向偏置 • 极低电压噪声：1nV/√Hz（最大值，100Hz）\n\n• 出色的电流增益匹配：0.5%（典型值）;

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Package：TO-78-6 金属罐；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS 2NPN 40V 0.02A TO78-6

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