MAT12分立半导体产品的晶体管-双极性晶体管（BJT）-阵列规格书PDF中文资料

MAT12属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由亚德诺半导体技术有限公司制造生产的MAT12晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。

GENERAL DESCRIPTION

The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems.

With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signal to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.

Excellent matching of the current gain (ΔhFE) to about 0.5 and low VOS of less than 10 μV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.

Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction.

The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the MAT12 does not need offset trimming in most circuit applications.

FEATURES

Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz

Excellent current gain match: 0.5 typical

Low offset voltage (VOS): 200 μV maximum

Outstanding offset voltage drift: 0.03 μV/°C typical

High gain bandwidth product: 200 MHz