MAT03FH分立半导体产品的晶体管-双极性晶体管（BJT）-阵列规格书PDF中文资料

MAT03FH属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由亚德诺半导体技术有限公司制造生产的MAT03FH晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。

GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3 max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ω) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.

Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.

FEATURES

Dual Matched PNP Transistor

Low Offset Voltage: 100 mV max

Low Noise: 1 nV/√Hz @ 1 kHz max

High Gain: 100 min

High Gain Bandwidth: 190 MHz typ

Tight Gain Matching: 3 max

Excellent Logarithmic Conformance: rBE = 0.3 Ω typ

Available in Die F