MAT01GH分立半导体产品的晶体管-双极性晶体管（BJT）-阵列规格书PDF中文资料

MAT01GH属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由亚德诺半导体技术有限公司制造生产的MAT01GH晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。

GENERAL DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.

FEATURES

Low VOS (VBE match): 40 µV typical, 100 µV maximum

Low TCVOS: 0.5 µV/°C maximum

High hFE: 500 minimum

Excellent hFE linearity from 10 nA to 10 mA

Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz

High breakdown: 45 V min

APPLICATIONS

Weigh scales

Low noise, op amp, front end

Current mirror and current sink/source

Low noise instrumentation amplifiers

Voltage controlled attenuators

Log amplifiers