MAT02AH数据手册ADI中文资料规格书

描述 Description

PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift, and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT02 is maintained over a wide range of collector current.FEATURES
Low Offset Voltage: 50 mV max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hzmax
High Gain (hFE): 500 min at IC= 1 mA
                      300 min at IC= 1 mA
Excellent Log Conformance: rBE .0.3 V
Low Offset Voltage Drift: 0.1 mV/8C max
Improved Direct Replacement for LM194/394
Available in Die Form

特性 Features

Low Offset Voltage: 50 mV max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hzmax
High Gain (hFE): 500 min at IC= 1 mA
                      300 min at IC= 1 mA
Excellent Log Conformance: rBE .0.3 V
Low Offset Voltage Drift: 0.1 mV/8C max
Improved Direct Replacement for LM194/394
Available in Die Form