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NCE6080

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080AI

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080AK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080AT

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080D

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080ED

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080EDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080EK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6080K

N-Channel60V(D-S)175째CMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NCE6080K

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

产品属性

  • 产品编号:

    MAN6080

  • 制造商:

    onsemi

  • 类别:

    光电器件 > 显示器模块 - LED 字符与数字

  • 包装:

    管件

  • 字符数:

    1

  • 大小 / 尺寸:

    0.750" 高 x 0.480" 宽 x 0.315" 直径(19.05mm x 12.20mm x 8.00mm)

  • 数字/字母大小:

    0.56"(14.22mm)

  • 显示类型:

    7 段

  • 通用引脚:

    共阴极

  • 颜色:

    红色

  • 电压 - 正向 (Vf)(典型值):

    1.8V

  • 电流 - 测试:

    20mA

  • 毫烛光等级:

    3.9mcd

  • 波长 - 峰值:

    650nm

  • 功率耗散(最大值):

    37mW

  • 封装/外壳:

    10-DIP(0.600",15.24mm)

  • 描述:

    DISPLAY 7SEG 0.56\

供应商型号品牌批号封装库存备注价格
Fairchild
24+
DIP
30
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
Fairchild
23+
10-DIP
33500
原装正品现货库存QQ:2987726803
询价
FAIRCHILD/仙童
06+
DIP
30
询价
FAIRCHILD/仙童
23+
DIP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
QUALITYTECH
272
全新原装 货期两周
询价
23+
DIP18
6000
原装正品假一罚百!可开增票!
询价
FAIRCHILD
05+
原厂原装
934
只做全新原装真实现货供应
询价
QTOPTOELE
23+
NA
2332
专做原装正品,假一罚百!
询价
MAN6410
1480
1480
询价
更多MAN6080供应商 更新时间2025-7-24 15:30:00