首页 >MA700C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MF-RSeries-PTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
PTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
HighTemperaturePTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
LowOhmicPTCResettableFuses | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MonolithicConstructionWithBuilt-inBase-EmitterResistors MonolithicConstructionWithBuilt-inBase-EmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC •ComplementtoMJE800/801/802/803 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPN(HIGHDCCURRENTGAIN)
| SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterBreakdownVoltage— :V(BR)CEO=-60V •DCCurrentGain— :hFE=750(Min)@IC=-1.5A •ComplementtoTypeMJE800 APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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