首页 >MA700-(TX)>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Siliconepitaxialplanartype Siliconepitaxialplanartype Forwavedetection Forsuperhighspeedswitching ■Features •LowforwardvoltageVF andgoodwavedetectionefficiencyη •Smalltemperaturecoefficientofforwardcharacteristic •SmallreversecurrentIR •High-densitymounting(5mmpitchi | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
SMALLSIGNALSCHOTTKYDIODES FEATURES ◇Lowforwardvoltagedrop ◇Satisforywavedetectionefficiency ◇ExtremelylowreversecurrentIR ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Extremelylowreversecurrent Theseproductsareidealforuseinordinarywavedetectionandsuperhighspeedswitchi | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SILICONEPITAXIALPLANARTYPESCHOTTKYBARRIERDIODES SILICONEPITAXIALPLANARTYPESCHOTTKYBARRIERDIODES forordinarywavedetection forsuperhighspeedswitching Features •Lowforwardrisevoltage(VF)andsatisfactorywavedetectionefficiency(η) •Smalltemperaturecoefficientofforwardcharacteristic •Extremelylowreversecurrent( | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | SEMTECH_ELEC | ||
SCHOTTKYBARRIERDIODES FEATURES: *LowforwardvoltageVF *Smalltemperaturecoefficentofforwardcharacterisble *SmallreversecurrentIR *High-densittymounting(5mmpichinsertion)ispossible *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
15VDetectionswitchtube | SUNMATE | |||
SCHOTTKYBARRIERDIODES | SUNMATE | |||
SchottkybarrierdiodeGlasssiliconswitchingdiodes Schottkybarrierdiode •300mWDO-34 •Glasssiliconswitchingdiodes •WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
SmallSignalSchottkyDiodes Features ◇Lowforwardvoltagedrop ◇Satisforywavedetectionefficiency ◇ExtremelylowreversecurrentIR ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Extremelylowreversecurrent Theseproductsareidealforuseinordinarywavedetectionandsuperhighspeedswitchi | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
SMALLSIGNALSCHOTTKYDIODES FEATURES •Lowforwardvoltagedrop •Satisfactorywavedetectionefficiency •Smalltemperaturecoefficientofforwardcharacteristics •Extremelylowreversecurrent •Theseproductsareidealforuseinordinarywavedetectionandsuperhighspeedswitchingcircuits •Hightemperaturesol | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | ||
SILICONSCHOTTKYBARRIERDIODE SILICONSCHOTTKYBARRIERDIODE | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | SEMTECH_ELEC |
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