MAZ3100-M

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Minitypepackage(3-pin) •Allowingtoachieveahigh-densityset •Sharprisingperformance •Widevoltagerange:VZ=2.0Vto36V

MBR3100

SCHOTTKYBARRIERRECTIFIER3.0AMPERES100VOLTS

AxialLeadRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinv

MBR3100

100V3A(LowIr)SingleAnode

[MEMT] GeneralDescription:100V3A(LowIr)SingleAnode

MBR3100

AxialLeadRectifier

MBR3100

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltCURRENT3Ampere FEATURES •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •SurgeOverloadRatingto80APeak •ForUseinLowVoltage,HighFrequen

MBR3100

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications

MBR3100

3.0A100VSchottkydiode

MBR3100

3.0A100VSchottkydiode

MBR3100

3ASCHOTTKYRECTIFIERS

3ASCHOTTKYRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

MBR3100

3.0ASCHOTTKYBARRIERDIODE

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications