首页 >M827A-SBMTWAMJAS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
6.2&6.55VoltTemperatureCompensatedSurfaceMountZenerReferenceDiodes DESCRIPTION Thepopular1N821thru1N829seriesofZero-TCReferenceDiodesprovidesaselectionofboth6.2Vand6.55Vnominalvoltagesandtemperaturecoefficientstoaslowas0.0005/oCforminimalvoltagechangewithtemperaturewhenoperatedat7.5mA.Theseglassaxial-leadedDO-7referen | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
6.2&6.55VoltTemperatureCompensatedSurfaceMountZenerReferenceDiodes DESCRIPTION Thepopular1N821thru1N829seriesofZero-TCReferenceDiodesprovidesaselectionofboth6.2Vand6.55Vnominalvoltagesandtemperaturecoefficientstoaslowas0.0005/oCforminimalvoltagechangewithtemperaturewhenoperatedat7.5mA.Theseglassaxial-leadedDO-7referen | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
6.2&6.55VoltTemperatureCompensatedSurfaceMountZenerReferenceDiodes DESCRIPTION Thepopular1N821thru1N829seriesofZero-TCReferenceDiodesprovidesaselectionofboth6.2Vand6.55Vnominalvoltagesandtemperaturecoefficientstoaslowas0.0005/oCforminimalvoltagechangewithtemperaturewhenoperatedat7.5mA.Theseglassaxial-leadedDO-7referen | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
6.2&6.55VoltTemperatureCompensatedSurfaceMountZenerReferenceDiodes DESCRIPTION Thepopular1N821thru1N829seriesofZero-TCReferenceDiodesprovidesaselectionofboth6.2Vand6.55Vnominalvoltagesandtemperaturecoefficientstoaslowas0.0005/oCforminimalvoltagechangewithtemperaturewhenoperatedat7.5mA.Theseglassaxial-leadedDO-7referen | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GLASSPASSIVATEDSUPERFASTRECTIFIER | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | ||
GLASSPASSIVATEDSUPERFASTRECTIFIER FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Singlerectifierconstruction •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
3WATTZENERDIODES 3WATTZENERDIODES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | DIGITRON | ||
Low-Noise,High-Precision,JFET-InputLow-Noise,High-Precision,JFET-Input | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Low-Noise,High-Precision,JFET-Input,OPERATIONALAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN |
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