2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

文件：111.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件：335.61 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

文件：111.83 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件：335.61 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件：335.61 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体