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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5256BKP	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-10	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-10L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-10LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-12	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-12L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-12LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-15	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-15L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BKP-15LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI

详细参数

型号：
M5M5256BKP
制造商：
Mitsubishi Electric
功能描述：
Static RAM, 32Kx8, 28 Pin, Plastic, DIP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	M5M5256BKP-10LL	MIT	DIP28	94+	8	全新原装进口自己库存优势	询价
深圳市毅创腾电子科技有限公司	M5M5256BKP-10LL	MIT	23+	DIP	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市一线半导体有限公司	M5M5256BKP-85L		24+		3000	公司存货	询价
芯有半导体（深圳）有限公司	M5M5256BKP-10L	MIT	05+	原厂原装	4243	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	M5M5256BKP-70L	MITSUBISHI	24+	DIP	1885	原装现货假一罚十	询价
深圳市鹏和科技有限公司	M5M5256BKP-10L	MIT	24+	DIP	5000	只做原装公司现货	询价
上海专毅电子科技有限公司	M5M5256BKP-10LL	MIT	17+	DIP28	9988	只做原装进口,自己库存	询价
中天科工半导体（深圳）有限公司	M5M5256BKP-70LL	MIT	20+	DIP28	35830	原装优势主营型号-可开原型号增税票	询价
深圳市恒达亿科技有限公司	M5M5256BKP-70L	MITSUBISHI	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
标准国际(香港)有限公司	M5M5256BKP-70L	Mit	25+		12	公司优势库存热卖中!!	询价

更多M5M5256BKP供应商更新时间2026-1-31 15:53:00

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