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M5M5256BKP

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-10

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-10L

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-10LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-12

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-12L

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-12LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-15

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-15L

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-15LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-70

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-70L

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-70LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-85

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-85L

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BKP-85LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BFP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256BP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DFP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M5M5256DFP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    M5M5256BKP

  • 制造商:

    Mitsubishi Electric

  • 功能描述:

    Static RAM, 32Kx8, 28 Pin, Plastic, DIP

供应商型号品牌批号封装库存备注价格
MIT
DIP28
94+
8
全新原装进口自己库存优势
询价
MIT
23+
DIP
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
3000
公司存货
询价
MIT
05+
原厂原装
4243
只做全新原装真实现货供应
询价
MIT
2016+
DIP/28
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
MIT
1635+
DIP28
6000
好渠道!好价格!一片起卖!
询价
MITSUBISHI
22+
DIP-28
4650
询价
MITSUBISHI
16+
DIP
1885
原装现货假一罚十
询价
MIT
2022+
DIP
5000
只做原装公司现货
询价
MIT
17+
DIP28
9988
只做原装进口,自己库存
询价
更多M5M5256BKP供应商 更新时间2024-4-29 9:31:00