首页 >M5M5256DFP-70VXL-I>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
M5M5256DFP-70VXL-I | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 |  | |
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | MitsubishiMITSUBISHI electlic 三菱电机 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | MitsubishiMITSUBISHI electlic 三菱电机 | |
详细参数
- 型号：
M5M5256DFP-70VXL-I
- 制造商：
MITSUBISHI
- 制造商全称：
Mitsubishi Electric Semiconductor
- 功能描述：
262144-BIT(32768-WORD BY 8-BIT) CMOS STATIC RAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MIT |
01+ |
SOP28 |
300 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
MIT |
2022 |
SOP28 |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
RENESAS |
2020+ |
SOP28 |
6946 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MIT |
SOP28 |
114 |
国内领先的集成电路专业配单!量大可发货!可开17%增值 |
询价 | |||
23+ |
N/A |
49300 |
正品授权货源可靠 |
询价 | |||
MIT |
19+ |
SOP28 |
32000 |
原装正品,现货特价 |
询价 | ||
RENESAS |
2020+ |
SOP28 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MIT |
21+ |
SOP28 |
12000 |
进口原装正品现货 |
询价 | ||
RENESAS/瑞萨 |
SOP-28 |
265209 |
假一罚十原包原标签常备现货! |
询价 |
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