首页 >M5M51008AFP/BFP/CFP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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