M5M27C202JK-15I资料datasheet下载供应价格第4页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M29FT800FP-12	文件：166.14 Kbytes Page：14 Pages	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divide 文件：166.14 Kbytes 页数：14 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29FT800RV-10	文件：166.14 Kbytes Page：14 Pages	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divide 文件：166.14 Kbytes 页数：14 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29FT800RV-12	文件：166.14 Kbytes Page：14 Pages	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divide 文件：166.14 Kbytes 页数：14 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29FT800VP-10	文件：166.14 Kbytes Page：14 Pages	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divide 文件：166.14 Kbytes 页数：14 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29FT800VP-12	文件：166.14 Kbytes Page：14 Pages	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divide 文件：166.14 Kbytes 页数：14 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29GB160BVP	文件：213.11 Kbytes Page：23 Pages	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult 文件：213.11 Kbytes 页数：23 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29GB160BVP	文件：240.04 Kbytes Page：25 Pages	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult 文件：240.04 Kbytes 页数：25 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29GB160BWG	文件：240.04 Kbytes Page：25 Pages	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult 文件：240.04 Kbytes 页数：25 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29GB160BWG	文件：213.11 Kbytes Page：23 Pages	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult 文件：213.11 Kbytes 页数：23 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M29GB161BVP	文件：240.04 Kbytes Page：25 Pages	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simult 文件：240.04 Kbytes 页数：25 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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详细参数

型号：
M5M
制造商：
MITSUBISHI
制造商全称：
Mitsubishi Electric Semiconductor
功能描述：
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

供应商	型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	M5M27C202K	MIT	25+	SOP-14	18000	原厂直接发货进口原装	询价
深圳市佳鑫美电子科技有限公司	M5M27C202K	MIT	25+	CDIP40	3629	原装优势!房间现货!欢迎来电!	询价
深圳市昊创电子有限公司	M5M27C202K	MIT	1824+	DIP40	3108	原装现货专业代理,可以代拷程序	询价
深圳市威尔健半导体有限公司	M5M27C202K	MIT	23+	DIP	50000	全新原装正品现货,支持订货	询价
深圳市恒达亿科技有限公司	M5M27C202K	M5L	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
芯有半导体（深圳）有限公司	M5M27C202K10	MIT	06+	原厂原装	4283	只做全新原装真实现货供应	询价
深圳市联世界科技有限公司	M5M27C202K-10	MIT	24+/25+		29	原装正品现货库存价优	询价
深圳市鹏和科技有限公司	M5M27C202K-10	M5L	24+	DIP	5000	只做原装公司现货	询价
深圳市华来深电子有限公司	M5M27C202K-10	MITSUBI	23+	CDIP镜	8560	受权代理!全新原装现货特价热卖!	询价
深圳市华睿芯科技有限公司	M5M27C202K-10	MIT	24+	CDIP40	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价

更多M5M供应商更新时间2026-1-27 17:20:00

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