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型号	下载订购	功能描述	制造商上传企业	LOGO
M59DR016DZB	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：240.77 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR016-ZBT	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：240.77 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR016	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：240.77 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR016C	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：240.77 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR016CZB	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：240.77 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M59DR032A		24+	BGA	3000	公司存货	询价
深圳市卓越微芯电子有限公司	M59DR032A	ST	25+	BGA	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
华富测量(深圳)传感技术有限公司	M59DR032A	ST	2138+	BGA	8960	专营BGA,QFP原装现货,假一赔十	询价
深圳市恒达亿科技有限公司	M59DR032A	ST	25+	BGA	3000	全新原装、诚信经营、公司现货销售!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M59DR032A	ST	26+	BGA	890000	一级总代理商原厂原装大批量现货一站式服务	询价
贸泽芯城（深圳）电子科技有限公司	M59DR032A120ZB6	ST/意法	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市科恒伟业电子有限公司	M59DR032A120ZB6	ST/意法	2450+	BGA	6540	原装现货或订发货1-2周	询价
深圳市弘为电子有限公司	M59DR032A-120ZB6	ST	24+	BGA	7748	原装现货假一罚十	询价
深圳和润天下电子科技有限公司	M59DR032A-120ZB6	ST/意法	N/A	22+	8681	原装正品现货可开增值税发票	询价
深圳市创盛芯科技有限公司	M59DR032A-120ZB6	NA	25+	NA	27	全新原装正品支持含税	询价

更多M59DR016DZB供应商更新时间2026-1-28 16:00:00

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