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M58LW064BT

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064A

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064ANF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064ANH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064AT

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064AZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064B

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064BNF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064BNH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064BZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064C

64Mbit(4Mbx16,UniformBlock,Burst)3VSupplyFlashMemory

SUMMARYDESCRIPTION M58LW064Cisa64Mbit(4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply.Onpower-upthememorydefaultstoReadmodewithanasynchronousbuswhereitcanbereadi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
SMD
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST/意法
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
TSOP56
0724+
334
全新原装进口自己库存优势
询价
ST
2022
TSOP
5280
原厂原装正品,价格超越代理
询价
ST
24+
TSOP56
5000
只做原装公司现货
询价
ST
17+
TSOP56
9988
只做原装进口,自己库存
询价
AlphaIndustries
23+
SOP
12000
全新原装假一赔十
询价
ST
19+
TSOP
32000
原装正品,现货特价
询价
MIT
2020+
IGBT驱动
16800
绝对原装进口现货,假一赔十,价格优势!
询价
ST
21+
TSOP
12000
进口原装正品现货
询价
更多M58LW064BT供应商 更新时间2024-6-22 15:00:00