16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

文件：1.35281 Mbytes 页数：70 Pages

NUMONYX

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

文件：1.35281 Mbytes 页数：70 Pages

NUMONYX

16 Mbit (512 Kbit x 32, boot block, burst)

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

文件：1.28397 Mbytes 页数：70 Pages

Micron

美光

PARALLEL 16M X32 PQFP

Micron

美光

Package：80-BQFP；包装：托盘 类别：集成电路（IC） 存储器 描述：MICRON - 16MBX32 3V AUTOMOTIVE -

Alliance

Package：80-BQFP；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FLASH 16MBIT 70NS 80PQFP

Micron Technology Inc.