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M58BW016DB80T3FF

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M58BW016DB80T3FT

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M58BW016DB80T3T

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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