M58BW016FT规格书应用电路库存现货美光-114ic电子网

首页 >M58BW016>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M58BW016BB	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB100T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB100T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB100ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB100ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB80T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB80T6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB80ZA3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB80ZA6T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58BW016BB90T3T	文件：895.86 Kbytes Page：63 Pages	16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 页数：63 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M58BW016
制造商：
NUMONYX
制造商全称：
Numonyx B.V
功能描述：
16 Mbit(512 Kbit x 32, boot block, burst) 3 V supply Flash memories

供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	M58BW16FB4T3F	MICRON	2447	PQFP-80	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
贸泽芯城（深圳）电子科技有限公司	M58BW16FB4T3F	MICRON/美光	23+	PQFP-80	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市中赛美电子科技有限公司	M58BW16FB4T3F	MICRON/美光	22+	NA	8000	中赛美只做原装只有原装	询价
深圳市华来深电子有限公司	M58BW16FB4T3F	MICRON	23+	PQFP-80	8560	受权代理!全新原装现货特价热卖!	询价
深圳市亿顺芯科技有限公司	M58BW16FB4T3F	MICRON/美光	25+	NA	20000	原盒原标,正品现货诚信经营价格美丽假一罚十	询价
兆亿微波(北京)科技有限公司	M58BW16FB4T3F	Micron			99		询价
深圳市赛尔通科技有限公司	M58BW16FB4T3T	Numonyx/STMi	23+	80-PQFP	65480		询价
瀚佳科技(深圳)有限公司	M58BW16FB4T3TTR	Micron Technology Inc.	24+	80-PQFP(19.9x13.9)	56200	一级代理/放心采购	询价
深圳市科雨电子有限公司	M58BW16FB4T3TTR	MICRON	25+	QFP-80	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	M58BW16FB4T3TTR	Micron	22+	80PQFP (19.9x13.9)	9000	原厂渠道,现货配单	询价

更多M58BW016供应商更新时间2026-4-17 15:01:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号