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M58BW016BB100T6T规格书详情
SUMMARY DESCRIPTION
The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally a 12V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.
The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and can be easily adapted to a large variety of system clock frequencies and microprocessors. All Writes are Asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.
The device has a boot block architecture with an array of 8 parameter block of 64Kb each and 31 main blocks of 512Kb each. The parameter blocks can be located at the top of the address space, M58BW016BT, M58BW016DT or at the bottom, M58BW016BB, M58BW016DB.
Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.
PE4FEATURES SUMMARY
■ SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V for Program, Erase and Read
– VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
– VPP = 12V for fast Program (optional)
■ HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
■ HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
■ SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and Erase with 64 bit User Programmable Pass word (M58BW016B version only)
■ OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency time < 6µs
– Common Flash Interface
■ MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
■ LOW POWER CONSUMPTION
– 5µA Typical Deep Power Down
– 60µA Typical Standby
– Automatic Standby after Asynchronous Read
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
产品属性
- 型号:
M58BW016BB100T6T
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
询价 | ||
ST |
22+ |
QFP |
30000 |
原装正品 |
询价 | ||
ST/意法 |
2022 |
QFP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST |
23+ |
NA |
2680 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
ST/意法 |
QFP |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
ST |
05+ |
QFP |
620 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
BOSCH |
23+ |
QFP-80 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
ST |
22+ |
QFP-80 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
ST/意法 |
21+ |
QFP80 |
3000 |
百域芯优势 实单必成 可开13点增值税发票 |
询价 | ||
ST |
23+ |
QFP |
25000 |
原厂/代理渠道 价格优势 |
询价 |