1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

文件：106.2 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

1 Mbit 128Kb x8 ZEROPOWER SRAM

Description The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution

文件：106.2 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件：339.54 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件：339.54 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER짰 SRAM

文件：339.54 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Package：32-DIP 模块（0.600"，15.24mm）；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 1MBIT PARALLEL 32PMDIP

STMICROELECTRONICS

意法半导体

Package：32-DIP 模块（0.600"，15.24mm）；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 1MBIT PARALLEL 32PMDIP

STMICROELECTRONICS

意法半导体