M48Z128YSH中文资料意法半导体数据手册PDF规格书

描述 Description

The M48Z128/Y/V ZEROPOWER® RAM is a 128 Kbit x 8 non-volatile static RAM organized as131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module to provide a highly integrated batterybacked memory solution.

特性 Features

■ Integrated, ultra low power SRAM, power-fail

control circuit, and battery

■ Conventional SRAM operation; unlimited

WRITE cycles

■ 10 years of data retention in the absence of

power

■ Battery internally isolated until power is first

applied

■ Automatic power-fail chip deselect and WRITE

protection

■ WRITE protect voltages:

(VPFD = power-fail deselect voltage)

– M48Z128: VCC = 4.75 to 5.5 V

4.5 V ≤ VPFD ≤ 4.75 V

– M48Z128Y: VCC = 4.5 to 5.5 V

4.2 V ≤ VPFD ≤ 4.5 V

– M48Z128V: VCC = 3.0 to 3.6 V

2.8 V ≤ VPFD ≤ 3.0 V

(contact ST sales office for availability)

■ Pin and function compatible with JEDEC

standard 128 K x 8 SRAMs

■ RoHS compliant

– Lead-free second level interconnect