200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features • Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Re

文件：328.21 Kbytes 页数：19 Pages

SAMSUNG

三星