32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

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32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件：184.58 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体