丝印：M2P45M12W2-1LA；Package：ACEPACKDMT-32；Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC

Features • AQG 324 qualified • 1200 V blocking voltage • 47.5 mΩ of typical RDS(on) • Maximum operating junction temperature TJ = 175 °C • DBC Cu-AlN-Cu based substrate to improve thermal performance • Isolation voltage 3.5 kV • Integrated NTC temperature sensor • Zig-zag pin-out

文件：908.54 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：M2P45M12W2-1LA；Package：ACEPACKDMT-32；Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC

Features • AQG 324 qualified • 1200 V blocking voltage • 47.5 mΩ of typical RDS(on) • Maximum operating junction temperature TJ = 175 °C • DBC Cu-AlN-Cu based substrate to improve thermal performance • Isolation voltage 3.5 kV • Integrated NTC temperature sensor • Zig-zag pin-out

文件：908.54 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体