M29W800T资料使用说明书供应代理第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M29W800T120N1TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T120N5R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T120N5TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T120N6R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T120N6TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T150M1R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T150M1TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T150M5R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T150M5TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T150M6R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M29W800T
制造商：
STMicroelectronics
功能描述：
NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29W800T-120N1	ST	24+	TSSOP	1002		询价
深圳市福田区绿盛电子商行	M29W800T-90N5	ST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市富诚威科技有限公司	M29W800T-120N5	ST	25+	TSSOP	3200	十年品牌!原装现货!!!	询价
深圳市星佑电子有限公司	M29W800T-90N1	ST	05+	原厂原装	4516	只做全新原装真实现货供应	询价
深圳市毅创腾电子科技有限公司	M29W800T-90N1	ST	23+	TSOP	5500	现货,全新原装	询价
上海鑫科润电子科技有限公司	M29W800T-120N5	ST	99+	SSOP-48	1724	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	M29W800T-120N1	ST	25+	TSSOP-48	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市华斯顿科技有限公司	M29W800T-120N5	ST	25+23+	SSOP-48	7934	绝对原装正品全新进口深圳现货	询价
深圳市宇创芯科技有限公司	M29W800T-120N5	ST/意法	24+	SSOP-48	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	M29W800T-120N5	ST/意法	23+	SSOP-48	50000	全新原装正品现货,支持订货	询价

更多M29W800T供应商更新时间2025-10-6 15:30:00

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