M29W800T150M6R资料datasheet下载库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
M29W800T150M6R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800T150M6TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M2S005-VFG256I	文件：0 bytes Page：0 Pages	VFPBGA-256	MICROSEMI 美高森美上传：深圳市宇集芯电子有限公司	MICROSEMI
M2S010-FGG484I	文件：0 bytes Page：0 Pages	FBGA484	MICROSEMI 美高森美上传：深圳市华睿芯科技有限公司	MICROSEMI
M2S025-FCSG325	文件：0 bytes Page：0 Pages	BGA	MICROSEMI/美高森美上传：深圳市振宏微科技有限公司	MICROSEMI/美高森美

更多M29W800T150M6R供应商更新时间2026-9-26 8:50:00