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型号	下载订购	功能描述	制造商上传企业	LOGO
M29W400T-100N5TR	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100N6R	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100N6TR	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100ZA1R	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100ZA1TR	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100ZA5R	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100ZA5TR	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100ZA6R	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-100ZA6TR	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W400T-120M1R	文件：245.97 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M29W400T
功能描述：
闪存 RO 511-M29W400BT55M 512KX8 OR 256KX16
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	M29W400T120N1	STMICROELECT	06+	原厂原装	4670	只做全新原装真实现货供应	询价
标准国际(香港)有限公司	M29W400T-100N1	SGS	947		47	公司优势库存热卖中!!	询价
贸泽芯城（深圳）电子科技有限公司	M29W400T-120M1	ST/意法	23+	SOP	7769	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市芯皇电子有限公司	M29W400T-120M1	ST/意法	23+	SO44	6000	专业配单保证原装正品假一罚十	询价
深圳市一线半导体有限公司	M29W512-100N6		24+		3000	公司存货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M29W512-100N6	ST	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市宏世佳电子科技有限公司	M29W512-100N6	ST	2025+	TSSOP	3565	全新原厂原装产品、公司现货销售	询价
深圳市科达星科技有限公司	M29W512-100N6	ST	24+	SSOP	37500	原装正品现货,价格有优势!	询价
深圳市卓越微芯电子有限公司	M29W512B	ST	25+	PLCC	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳鑫美电子科技有限公司	M29W512B120K1	ST	25+	PLCC	2987	只售原装自家现货!诚信经营!欢迎来电!	询价

更多M29W400T供应商更新时间2025-10-6 10:34:00

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