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M29W400T-120M1R中文资料意法半导体数据手册PDF规格书
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DESCRIPTION
The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
■ M29W400T and M29W400B are replaced respectivelyby the M29W400BT and M29W400BB
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 90ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
■ 100,000PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
PLCC32 |
8795 |
询价 | |||
ST/意法 |
23+ |
NA/ |
3507 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST |
2020+ |
PLCC32 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
ST |
原厂原封 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
SOP |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
MICRON |
21+ |
BGA/TSOP |
50000 |
特价来袭!美光一级代理入驻114电子网 |
询价 | ||
ST |
2022 |
PLCC32 |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
3000 |
公司存货 |
询价 | |||||
Micron |
17+ |
6200 |
询价 | ||||
Micron |
22+ |
SMD |
25000 |
只做原装进口现货,专注配单 |
询价 |