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M29W008B-90N5TR中文资料意法半导体数据手册PDF规格书
M29W008B-90N5TR规格书详情
DESCRIPTION
The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
■ M29W008T and M29W008B are replaced respectively by the M29W008AT and M29W008AB
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 100ns
■ FAST PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W008T: D2h
– Device Code, M29W008B: DCh
产品属性
- 型号:
M29W008B-90N5TR
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
ST/意法 |
23+ |
NA/ |
3269 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
询价 | ||
ST |
SMD |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+23+ |
TSOP |
33948 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
TSOP |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
ST |
2022 |
TSOP |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
ST |
21+ |
TSOP |
12000 |
进口原装正品现货 |
询价 | ||
ST |
04+ |
TSOP |
628 |
询价 | |||
ST |
2021+ |
TSOP40 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |