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M29F400B-90N3TR中文资料意法半导体数据手册PDF规格书
M29F400B-90N3TR规格书详情
DESCRIPTION
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device
can also be programmed in standard program mers.
M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB
5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
–10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F400T: 00D5h
– Device Code, M29F400B: 00D6h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3456 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
24+/25+ |
SOP |
574 |
原装正品现货库存价优 |
询价 | ||
ST |
00+ |
TSOP-44 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
STM |
23+ |
TSOP/48 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
6 |
公司优势库存 热卖中!! |
询价 | ||||
Micron Technology Inc. |
25+ |
48-TFSOP(0.724 18.40mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST |
23+ |
SOP |
65480 |
询价 | |||
STMicroe |
2025+ |
TSSOP48 |
3550 |
全新原厂原装产品、公司现货销售 |
询价 | ||
25+23+ |
SOIC44 |
24264 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 |