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M29F400B-90N3TR中文资料意法半导体数据手册PDF规格书
M29F400B-90N3TR规格书详情
DESCRIPTION
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device
can also be programmed in standard program mers.
M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB
5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
–10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F400T: 00D5h
– Device Code, M29F400B: 00D6h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
2407+ |
SOP |
7750 |
原装现货!实单直说!特价! |
询价 | ||
ST |
23+ |
TSOP-44 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
STMicro |
23+ |
TSSOP48 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
23+ |
SOP |
65480 |
询价 | |||
ST |
2023+ |
TSOP48 |
3000 |
进口原装现货 |
询价 | ||
ST |
6 |
公司优势库存 热卖中!! |
询价 | ||||
ST/意法 |
23+ |
TSOP |
7693 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
STM |
24+ |
TSOP |
7500 |
十年品牌!原装现货!!! |
询价 | ||
ST/意法 |
23+ |
TSSOP-48 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
25+23+ |
SOIC44 |
24264 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 |