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M29F400B-90N3TR中文资料意法半导体数据手册PDF规格书

M29F400B-90N3TR
厂商型号

M29F400B-90N3TR

功能描述

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

文件大小

231.73 Kbytes

页面数量

34

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体集团官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-6 13:10:00

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M29F400B-90N3TR规格书详情

DESCRIPTION

The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device

can also be programmed in standard program mers.

M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB

5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 55ns

FAST PROGRAMMING TIME

–10µs by Byte / 16µs by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code, M29F400T: 00D5h

– Device Code, M29F400B: 00D6h

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
2407+
SOP
7750
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50000
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23+
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23+
SOP
65480
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2023+
TSOP48
3000
进口原装现货
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ST
6
公司优势库存 热卖中!!
询价
ST/意法
23+
TSOP
7693
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
STM
24+
TSOP
7500
十年品牌!原装现货!!!
询价
ST/意法
23+
TSSOP-48
50000
全新原装正品现货,支持订货
询价
25+23+
SOIC44
24264
绝对原装正品现货,全新深圳原装进口现货
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