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M29F400B-70N6R中文资料PDF规格书
M29F400B-70N6R规格书详情
DESCRIPTION
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device
can also be programmed in standard program mers.
M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB
5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
–10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F400T: 00D5h
– Device Code, M29F400B: 00D6h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
21+ |
ST |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
2023+ |
SOP-44 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ST |
22+ |
SOP-44 |
30000 |
原装正品 |
询价 | ||
ST |
23+ |
SOP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
2020+ |
TSSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
ST |
23+ |
TSSOP |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
2021+ |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST |
6 |
公司优势库存 热卖中!! |
询价 |