M2950资料datasheet下载市场行情友顺第5页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M295V002B-90XN6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-90XP1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-90XP6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120K1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120N6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120P1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120P6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002NT-120XK1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M295
制造商：
UTC-IC
制造商全称：
UTC-IC
功能描述：
200mA LOW-DROPOUT VOLTAGE REGULATOR

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	M2950	UTC/友顺	23+	DIP-8SOP-8TO-92	7685	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市弘为电子有限公司	M29503-11P		24+	NA	122	原装现货假一罚十	询价
深圳市一线半导体有限公司	M29503-11P		24+		3000	公司存货	询价
标准国际(香港)有限公司	M29504/05-4046	AMPHENOL	25+		12	公司优势库存热卖中!	询价
深圳市得捷芯城科技有限公司	M29503WU	MREL/麦瑞	24+	NA/	34	优势代理渠道,原装正品,可全系列订货开增值税票	询价
现代芯城（深圳）科技有限公司	M29504/14-4132C		24+	N/A	58000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市骏创达科技有限公司	M29504/5-4046	AMPHENOL/安费诺	2508+	/	309575	一级代理，原装现货	询价
深圳阅创想电子实业有限公司	M29504/5-4046	AMPHENOL/安费诺	24+		7591	原厂现货渠道	询价
深圳市创新迹电子有限公司	M29504/15-4181C	GLENAIR/AMPHENOL/DELPHI	22+	NA	20000	公司只有原装品质保障	询价

更多M295供应商更新时间2025-12-24 11:09:00

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