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型号	下载订购	功能描述	制造商上传企业	LOGO
M295V002B-70K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70N6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70P1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70P6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70XK1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70XK6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70XN1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70XN6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V002B-70XP1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M295
制造商：
UTC-IC
制造商全称：
UTC-IC
功能描述：
250 mA LOW-DROPOUT VOLTAGE REGULATOR

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	M2950-5.0V	UTC/友顺	23+	TO-92	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市一线半导体有限公司	M2951		24+		3000	公司存货	询价
深圳市英科美电子有限公司	M2951	MICROCHIP/微芯	25+		26800	保证全新原装正品	询价
深圳市弘为电子有限公司	M29513-11P	MNDSPEED	24+	BGA	964	原装现货假一罚十	询价
深圳市威雅利发展有限公司	M29513-236	25+	25+	TSSOP-14	8000	原厂原包装,终端BOM表可配单	询价
深圳市安富世纪电子有限公司	M2951L-S08-R	UTC	23+	SOP-8	50000	全新原装正品现货,支持订货	询价
深圳市能元时代电子有限公司	M2951L-S08-R	UTC	23+	SOP-8	12800	公司只有原装欢迎来电咨询。	询价
深圳市创新迹电子有限公司	M2951L-S08-R	UTC	22+	SOP-8	20000	公司只做原装品质保障	询价
深圳市信科微科技有限公司	M2951L-S08-R	UTC	26+	SOP-8	2695	原厂渠道可含税出货，支持一站式配单	询价
深圳市盈慧通电子有限公司	M2951L-S08-R	UTC	26+	SOP-8	2695	电子元器件采购降本 30%!砍掉中间差价！	询价

更多M295供应商更新时间2026-10-24 11:10:00

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