M28W800资料datasheet下载供应商报价第5页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M28W800CB100ZB1T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB100ZB6T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB70N1T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB70N6T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB70ZB1T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB70ZB6T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB85N1T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB85N6T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB85ZB1T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W800CB85ZB6T	文件：369.61 Kbytes Page：49 Pages	8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ 文件：369.61 Kbytes 页数：49 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M28W800
功能描述：
闪存 8M(512Kx16) 70ns
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	M28W800BT-100N6	ST	24+/25+		1110	原装正品现货库存价优	询价
深圳市益百分电子有限公司	M28W800CB70N6	ST	04+	TSOP48	166	全新原装进口自己库存优势	询价
深圳市卓越微芯电子有限公司	M28W800CT70ZB6T	ST	25+	QFN	1787	百分百原装正品真实公司现货库存本公司只做原装可	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M28W800DT70N6	ST	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市一线半导体有限公司	M28W800AT-90ZA6	ST	24+	BGA48	557		询价
深圳市欧立现代科技有限公司	M28W800CT-70N6	ST	24+	TSOP	6980	原装现货,可开13%税票	询价
深圳市豪迈兴电子有限公司	M28W800BT-100N6	ST	24+	TSOP	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
齐创科技(上海,北京,青岛)有限公司	M28W800DT70N6	ST	23+	TSSOP	5000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	M28W800BB90N6	ST	24+	TSOP	54816	原装现货假一罚十	询价
深圳市鹏和科技有限公司	M28W800CT70ZB6T	ST	24+	QFN	5000	全现原装公司现货	询价

更多M28W800供应商更新时间2026-1-17 14:30:00

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