8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

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8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：289.48 Kbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：369.61 Kbytes 页数：49 Pages

STMICROELECTRONICS

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8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：369.61 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W800C is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件：369.61 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体